EMH52_16 datasheet(2/8 Pages) ROHM

Part #	EMH52

Description	General purpose (dual digital transistor)

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Manufacturer	ROHM [Rohm]

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EMH52

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Supply voltage

VCC

50

V

Input voltage

VIN

40 to -10

V

Output current

IO

30

mA

Collector current

IC(MAX)*1

100

mA

Power dissipation

PD*2*3

150

mW

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Input voltage

VI(off)

VCC = 5V, IO = 100μA

-

0.8

V

VI(on)

VO = 0.3V, IO = 2mA

3.0

-

Output voltage

VO(on)

IO = 5mA, II = 0.5mA

-

50

150

mV

Input current

II

VI = 5V

-

180

μA

Output current

IO(off)

VCC = 50V, VI = 0V

-

500

nA

DC current gain

GI

VO = 10V, IO = 5mA

80

-

Input resistance

R1

-

32.9

47

61.1

kΩ

Resistance ratio

R2/R1

-

0.8

1.0

1.2

-

Transition frequency

fT*1

VCE = 10V, IE = -5mA,

f = 100MHz

-

250

-

MHz

*1 Characteristics of built-in transistor.

*2 Each terminal mounted on a reference land.

*3 120mW per element must not be exceeded.

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2/5

20160119 - Rev.003

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