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NRVUS220VT3G Datasheet(PDF) 2 Page - ON Semiconductor |
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NRVUS220VT3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MURS220T3G, NRVUS220VT3G, SURS8220T3G www.onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current IF(AV) 2.0 @ TL = 145°C A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 40 A Operating Junction Temperature Range TJ −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Lead (TL = 25°C) RθJL 13 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) (IF = 2.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 150°C) vF 0.95 0.77 Volts Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) IR 2.0 50 mA Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr 35 25 ns Maximum Forward Recovery Time (IF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V) tfr 25 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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