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NRVUD320VT4G Datasheet(PDF) 2 Page - ON Semiconductor |
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NRVUD320VT4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page MURD320, NRVUD320, SURD8320 www.onsemi.com 2 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance − Junction−to−Case RqJC 6 °C/W Thermal Resistance − Junction−to−Ambient (Note 1) RqJA 80 °C/W 1. Rating applies when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS Characteristics Symbol Value Unit Maximum Instantaneous Forward Voltage Drop (Note 2) (iF = 3 Amps, TJ = 25°C) (iF = 3 Amps, TJ = 125°C) vF 0.95 0.75 Volts Maximum Instantaneous Reverse Current (Note 2) (TJ = 25°C, Rated dc Voltage) (TJ = 125°C, Rated dc Voltage) iR 5 500 mA Maximum Reverse Recovery Time (IF = 1 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C) (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C) trr 35 25 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Figure 1. Typical Forward Voltage vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 0.6 0.2 0.8 30 0.1 0.3 0.2 2.0 1.0 100 20 7.0 3.0 0.5 5.0 50 1.4 VR, REVERSE VOLTAGE (VOLTS) 060 40 100 120 40 80 0.008 0.004 0.002 0.8 0.4 0.2 20 4.0 2.0 8.0 TJ = 175°C 20 80 200 Figure 2. Typical Reverse Current* IF(AV), AVERAGE FORWARD CURRENT (AMPS) 0 3.0 2.0 0 2.0 1.0 3.0 5.0 4.0 14 7.0 6.0 1.0 10 Figure 3. Average Power Dissipation 0.4 0.7 10 70 1.0 1.2 100 °C TJ = 25°C 175 °C 160 180 140 0.08 0.04 0.02 100 °C 25 °C 6.0 5.0 4.0 9.0 8.0 7.0 9.0 8.0 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficiently below rated VR. 150 °C 11 10 13 12 TJ = 175°C IPK/IAV = 20 SINE WAVE SQUARE WAVE dc 10 5.0 150 °C |
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