M48Z128Y datasheet(8/21 Pages) STMICROELECTRONICS

Part #	M48Z128Y

Description	5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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8 / 21 page

M48Z128, M48Z128Y, M48Z128V*

8/21

Table 6. DC Characteristics

Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V, 4.5 to 5.5V, or 3.0 to 3.6V (except where noted).

2. Outputs deselected.

OPERATING MODES

The M48Z128/Y/V also has its own Power-fail De-

tect circuit. The control circuitry constantly moni-

tors the single VCC supply for an out of tolerance

condition. When VCC is out of tolerance, the circuit

write protects the SRAM, providing a high degree

of data security in the midst of unpredictable sys-

tem operation brought on by low VCC. As VCC falls

below the switchover voltage (VSO), the control cir-

cuitry connects the battery which maintains data

until valid power returns.

Table 7. Operating Modes

Note: X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.

1. See Table 11, page 14 for details.

Sym

Parameter

Test Condition(1)

M48Z128/Y

M48Z128V

Unit

–70 / –85 / –120

–85 / –120

Min

Max

Min

Max

ILI

Input Leakage Current

0V

≤ VIN ≤ VCC

±1

µA

ILO

(2)

Output Leakage Current

0V

≤ VOUT ≤ VCC

±1

µA

ICC

Supply Current

E = VIL

Outputs open

105

50

mA

ICC1

Supply Current (Standby) TTL

E = VIH

74

mA

ICC2

Supply Current (Standby) CMOS

E = VCC – 0.2V

43

mA

VIL

Input Low Voltage

–0.3

0.8

–0.3

0.6

V

VIH

Input High Voltage

2.2

VCC + 0.3

2.2

VCC + 0.3

V

VOL

Output Low Voltage

IOL = 2.1mA

0.4

V

VOH

Output High Voltage

IOH = –1mA

2.4

2.2

V

Mode

VCC

E

G

W

DQ0-DQ7

Power

Deselect

4.75 to 5.5V

or

4.5 to 5.5V

or

3.0 to 3.6V

VIH

X

High Z

Standby

WRITE

VIL

X

VIL

DIN

Active

READ

VIL

VIH

DOUT

Active

READ

VIL

VIH

High Z

Active

Deselect

VSO to VPFD (min)

(1)

X

High Z

CMOS Standby

Deselect

≤ VSO(1)

X

High Z

Battery Back-up Mode

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