PSMN009 datasheet(3/8 Pages) PHILIPS

Part #	PSMN009

Description	N-channel TrenchMOS횚 transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

PSMN009-100W

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

I

S

Continuous source current

-

100

A

(body diode)

I

SM

Pulsed source current (body

-

300

A

diode)

V

SD

Diode forward voltage

I

F = 25 A; VGS = 0 V

-

0.82

1.2

V

I

F = 75 A; VGS = 0 V

-

0.95

-

V

t

rr

Reverse recovery time

I

F = 20 A; -dIF/dt = 100 A/µs;

-

100

-

ns

Q

rr

Reverse recovery charge

V

GS = 0 V; VR = 30 V

-

0.5

-

µC

October 1999

3

Rev 1.100

Similar Part No. - PSMN009

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NXP Semiconductors	PSMN009-100B	271Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-29 April 2002
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