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ADA4922-1ACPZ-RL7 Datasheet(PDF) 6 Page - Analog Devices |
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ADA4922-1ACPZ-RL7 Datasheet(HTML) 6 Page - Analog Devices |
6 / 20 page Data Sheet ADA4922-1 Rev. A | Page 5 of 19 ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating Supply Voltage 26 V Power Dissipation See Figure 3 Storage Temperature Range –65°C to +125°C Operating Temperature Range –40°C to +85°C Lead Temperature (Soldering 10 sec) 300°C Junction Temperature 150°C Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, θJA is specified for a device soldered in the circuit board with its exposed paddle soldered to a pad on the PCB surface that is thermally connected to a copper plane, with zero airflow. Table 4. Thermal Resistance Package Type θJA θJC Unit 8-Lead SOIC with EP on 4-Layer Board 79 25 C/W 8-Lead LFCSP with EP on 4-Layer Board 81 17 C/W MAXIMUM POWER DISSIPATION The maximum safe power dissipation in the ADA4922-1 package is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit can change the stresses that the package exerts on the die, permanently shifting the parametric performance of the ADA4922-1. Exceeding a junction temperature of 150°C for an extended period can result in changes in the silicon devices potentially causing failure. The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). The power dissipated due to the load drive depends upon the particular application. For each output, the power due to load drive is calculated by multiplying the load current by the associated voltage drop across the device. The power dissipated due to all of the loads is equal to the sum of the power dissipation due to each individual load. RMS voltages and currents must be used in these calculations. Airflow increases heat dissipation, effectively reducing θJA. In addition, more metal directly in contact with the package leads from metal traces, through holes, ground, and power planes reduces the θJA. The exposed paddle on the underside of the package must be soldered to a pad on the PCB surface that is thermally connected to a copper plane to achieve the specified θJA. Figure 3 shows the maximum safe power dissipation in the packages vs. the ambient temperature for the 8-lead SOIC (79°C/W) and for the 8-lead LFCSP (81°C/W) on a JEDEC standard 4-layer board, each with its underside paddle soldered to a pad that is thermally connected to a PCB plane. θJA values are approximations. 3.0 0 –40 80 AMBIENT TEMPERATURE ( C) 2.5 2.0 1.5 1.0 0.5 –20 0 20 40 60 SOIC LFCSP Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board ESD CAUTION |
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