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LF351 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LF351
Description  LF351 Wide Bandwidth JFET Input Operational Amplifier
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LF351 Datasheet(HTML) 3 Page - National Semiconductor (TI)

 
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AC Electrical Characteristics (Note 3)
Symbol
Parameter
Conditions
LF351
Units
Min
Typ
Max
SR
Slew Rate
VSe g15V TAe25 C13
V ms
GBW
Gain Bandwidth Product
VSe g15V TAe25 C
4
MHz
en
Equivalent Input Noise Voltage
TAe25 C RSe100X
25
nV
0Hz
fe1000 Hz
in
Equivalent Input Noise Current
Tje25 C fe1000 Hz
001
pA
0Hz
Note 1
For operating at elevated temperature the device must be derated based on the thermal resistance iJA
Note 2
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage
Note 3
These specifications apply for VSeg15V and 0 CsTAsa70 C VOS IB and IOS are measured at VCMe0
Note 4
The input bias currents are junction leakage currents which approximately double for every 10 C increase in the junction temperature Tj Due to the limited
production test time the input bias currents measured are correlated to junction temperature In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation PD TjeTAaijA PD where ijA is the thermal resistance from junction to ambient Use of a heat sink is
recommended if input bias current is to be kept to a minimum
Note 5
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice From
g
15V to g5V
Note 6
Max Power Dissipation is defined by the package characteristics Operating the part near the Max Power Dissipation may cause the part to operate
outside guaranteed limits
3


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