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PSMN1R5-40PS Datasheet(PDF) 9 Page - NXP Semiconductors |
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PSMN1R5-40PS Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page NXP Semiconductors PSMN1R5-40PS N-channel 40 V 1.6 mΩ standard level MOSFET in TO220 PSMN1R5-40PS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 15 July 2013 9 / 14 03aa35 VGS (V) 0 6 4 2 10- 4 10- 5 10- 2 10- 3 10- 1 ID (A) 10- 6 min typ max Fig. 12. Sub-threshold drain current as a function of gate-source voltage 003aaf322 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 Tj ( C) a Fig. 13. Normalized drain-source on state resistance factor as a function of junction temperature 003aaf326 0 2 4 6 8 0 20 40 60 80 ID(A) RDSon (mΩ) 5.2 4.6 20 4.8 VGS(V) = 5 10 Fig. 14. Drain-source on-state resistance as a function of drain current; typical values 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 15. Gate charge waveform definitions |
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