Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

ISO5852S-Q1 Datasheet(PDF) 8 Page - Texas Instruments

Click here to check the latest version.
Part # ISO5852S-Q1
Description  High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features
Download  43 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

ISO5852S-Q1 Datasheet(HTML) 8 Page - Texas Instruments

Back Button ISO5852S-Q1 Datasheet HTML 4Page - Texas Instruments ISO5852S-Q1 Datasheet HTML 5Page - Texas Instruments ISO5852S-Q1 Datasheet HTML 6Page - Texas Instruments ISO5852S-Q1 Datasheet HTML 7Page - Texas Instruments ISO5852S-Q1 Datasheet HTML 8Page - Texas Instruments ISO5852S-Q1 Datasheet HTML 9Page - Texas Instruments ISO5852S-Q1 Datasheet HTML 10Page - Texas Instruments ISO5852S-Q1 Datasheet HTML 11Page - Texas Instruments ISO5852S-Q1 Datasheet HTML 12Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 8 / 43 page
background image
8
ISO5852S-EP
SLLSEW1 – DECEMBER 2016
www.ti.com
Product Folder Links: ISO5852S-EP
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
Input, output, or the sum of input and output power should not exceed this value.
7.7 Safety Limiting Values
Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure of
the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat
the die and damage the isolation barrier, potentially leading to secondary system failures.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IS
Safety input, output, or supply
current
RθJA = 99.6°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C,
see Figure 2
456
mA
RθJA = 99.6°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C,
see Figure 2
346
RθJA = 99.6°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C,
see Figure 2
228
RθJA = 99.6°C/W, VI = 15 V, TJ = 150°C, TA = 25°C,
see Figure 2
84
RθJA = 99.6°C/W, VI = 30 V, TJ = 150°C, TA = 25°C,
see Figure 2
42
PS
Safety input, output, or total
power
RθJA = 99.6°C/W, TJ = 150°C, TA = 25°C, see Figure 3
255(1)
mW
TS
Safety temperature
150
°C
(1)
Production tested
≥ 6840 VRMS for 1 second in accordance with UL 1577.
The safety-limiting constraint is the maximum junction temperature specified in the data sheet. The power
dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines
the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information table is that
of a device installed on a high-K test board for leaded surface-mount packages. The power is the recommended
maximum input voltage times the current. The junction temperature is then the ambient temperature plus the
power times the junction-to-air thermal resistance.
7.8 Safety-Related Certifications
VDE
CSA
UL
CQC
TUV
Certified according to DIN V
VDE V 0884-10
(VDE V 0884-10):2006-12
and DIN EN 61010-1 (VDE
0411-1):2011-07
Plan to certify under CSA
Component Acceptance
Notice 5A, IEC 60950-1, and
IEC 60601-1
Recognized under UL 1577
Component Recognition
Program
Certified according to
GB4943.1-2011
Certified according to
EN 61010-1:2010 (3rd Ed) and
EN 60950-
1:2006/A11:2009/A1:2010/
A12:2011/A2:2013
Reinforced Insulation
Maximum Transient isolation
voltage, 8000 VPK;
Maximum surge isolation
voltage, 8000 VPK,
Maximum repetitive peak
isolation voltage, 2121 VPK
Isolation Rating of 5700
VRMS;
Reinforced insulation per
CSA 60950-1- 07+A1+A2
and IEC 60950-1 (2nd Ed.),
800 VRMS max working
voltage (pollution degree 2,
material group I) ;
2 MOPP (Means of Patient
Protection) per CSA 60601-
1:14 and IEC 60601-1 Ed.
3.1, 250 VRMS (354 VPK)
max working voltage
Single Protection, 5700
VRMS
(1)
Reinforced Insulation,
Altitude
≤ 5000m, Tropical
climate, 400 VRMS maximum
working voltage
5700 VRMS Reinforced insulation per
EN 61010-1:2010 (3rd Ed) up to
working voltage of 600 VRMS
5700 VRMS Reinforced insulation per
EN 60950-
1:2006/A11:2009/A1:2010/
A12:2011/A2:2013 up to working
voltage of 800 VRMS
Certification completed
Certificate number:
40040142
Certificate planned
Certification completed
File number: E181974
Certification completed
Certificate number:
CQC16001141761
Certification completed
Client ID number: 77311


Similar Part No. - ISO5852S-Q1

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
ISO5852S-Q1 TI1-ISO5852S-Q1 Datasheet
1Mb / 42P
[Old version datasheet]   High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver
ISO5852S-Q1 TI1-ISO5852S-Q1 Datasheet
1Mb / 43P
[Old version datasheet]   High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features
More results

Similar Description - ISO5852S-Q1

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
ISO5852S-EP TI1-ISO5852S-EP Datasheet
1Mb / 43P
[Old version datasheet]   High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features
ISO5452 TI-ISO5452 Datasheet
1Mb / 37P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features
ISO5852S TI-ISO5852S_15 Datasheet
1Mb / 37P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Split Outputs and Active Safety Features
ISO5852S-Q1 TI1-ISO5852S-Q1 Datasheet
1Mb / 42P
[Old version datasheet]   High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver
ISO5851 TI-ISO5851 Datasheet
1Mb / 34P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
ISO5451 TI-ISO5451 Datasheet
1Mb / 38P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
ISO5452-Q1 TI1-ISO5452-Q1 Datasheet
1Mb / 41P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
ISO5451-Q1 TI1-ISO5451-Q1 Datasheet
1Mb / 39P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
ISO5851-Q1 TI1-ISO5851-Q1 Datasheet
1Mb / 40P
[Old version datasheet]   High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver
UCC21736-Q1 TI1-UCC21736-Q1 Datasheet
1Mb / 54P
[Old version datasheet]   UCC21736-Q1 10-A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com