Philips Semiconductors

PMGD400UN

Dual N-channel

µTrenchMOS™ ultra low level FET

Product data

Rev. 01 — 3 March 2004

8 of 12

9397 750 12759

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

03an97

0

0.2

0.4

0.6

0.8

1

0

0.2

0.4

0.6

0.8

1

VSD (V)

IS

(A)

Tj = 25 °C

150

°C

VGS = 0 V

03an99

0

1

2

3

4

5

0

0.2

0.4

0.6

0.8

1

QG (nC)

VGS

(V)

ID = 1 A

Tj = 25 °C

VDD = 15 V