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2SK3439 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SK3439 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3439 2001-12-11 2 Electrical Characteristics (Note 4) (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-off current IDSS VDS = 30 V, VGS = 0 V 100 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 30 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 2.5 V VGS = 10 V, ID = 38 A 3.8 5.0 Drain-source ON resistance RDS (ON) VGS = 4 V, ID = 38 A 5.0 10 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 38 A 35 70 S Input capacitance Ciss 5450 Reverse transfer capacitance Crss 620 Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 1850 pF Rise time tr 15 Turn-on time ton 30 Fall time tf 65 Switching time Turn-off time toff Duty <= 1%, tw = 10 µs 110 ns Total gate charge (gate-source plus gate-drain) Qg 116 Gate-source charge Qgs 84 Gate-drain (“miller”) charge Qgd VDD ≈ 34 V, VGS = 10 V, ID = 75 A 32 nC Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don’t connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 75 A Pulse drain reverse current (Note 1, Note 5) IDRP1 300 A Continuous drain reverse current (Note 1, Note 5) IDR2 1 A Pulse drain reverse current (Note 1, Note 5) IDRP2 4 A Forward voltage (diode) VDS2F IDR1 = 75 A, VGS = 0 V −1.5 V Reverse recovery time trr 120 ns Reverse recovery charge Qrr IDR = 75 A, VGS = 0 V, dIDR/dt = 50 A/µs 180 nC Note 5: drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. VDD ≈ 15 V 0 V VGS 10 V ID = 38 A VOUT |
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