NST3946DXV6T1G datasheet(2/12 Pages) ONSEMI

Part #	NST3946DXV6T1G

Description	Complementary General Purpose Transistor

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NST3946DXV6

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Table 2. THERMAL CHARACTERISTICS

Characteristic (One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25

°C

PD

357

(Note 1)

2.9

(Note 1)

mW

mW/

°C

Thermal Resistance

Junction-to-Ambient

RqJA

350

(Note 1)

°C/W

Characteristic (Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25

°C

PD

500

(Note 1)

4.0

(Note 1)

mW

mW/

°C

Thermal Resistance Junction-to-Ambient

RqJA

250

(Note 1)

°C/W

Junction and Storage Temperature Range

TJ, Tstg

55 to +150

°C

1. FR−4 @ Minimum Pad

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0)

(NPN)

(IC = −1.0 mAdc, IB = 0)

(PNP)

V(BR)CEO

40

−40

−

Vdc

Collector − Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

(NPN)

(IC = −10 mAdc, IE = 0)

(PNP)

V(BR)CBO

60

−40

−

Vdc

Emitter − Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

(NPN)

(IE = −10 mAdc, IC = 0)

(PNP)

V(BR)EBO

6.0

−5.0

−

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

(NPN)

(VCE = −30 Vdc, VEB = −3.0 Vdc)

(PNP)

IBL

−

50

−50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

(NPN)

(VCE = −30 Vdc, VEB = −3.0 Vdc)

(PNP)

ICEX

−

50

−50

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(NPN)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = −0.1 mAdc, VCE = −1.0 Vdc)

(PNP)

(IC = −1.0 mAdc, VCE = −1.0 Vdc)

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −50 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

hFE

40

70

100

60

30

60

80

100

60

30

−

300

−

300

−

Collector − Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(NPN)

(IC = 50 mAdc, IB = 5.0 mAdc)

(IC = −10 mAdc, IB = −1.0 mAdc)

(PNP)

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat)

−

0.2

0.3

−0.25

−0.4

Vdc

Base − Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(NPN)

(IC = 50 mAdc, IB = 5.0 mAdc)

(IC = −10 mAdc, IB = −1.0 mAdc)

(PNP)

(IC = −50 mAdc, IB = −5.0 mAdc)

VBE(sat)

0.65

−

−0.65

−

0.85

0.95

−0.85

−0.95

Vdc

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