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NST3946DXV6T1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NST3946DXV6T1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 12 page NST3946DXV6 http://onsemi.com 2 Table 2. THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25 °C PD 357 (Note 1) 2.9 (Note 1) mW mW/ °C Thermal Resistance Junction-to-Ambient RqJA 350 (Note 1) °C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25 °C PD 500 (Note 1) 4.0 (Note 1) mW mW/ °C Thermal Resistance Junction-to-Ambient RqJA 250 (Note 1) °C/W Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C 1. FR−4 @ Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) (NPN) (IC = −1.0 mAdc, IB = 0) (PNP) V(BR)CEO 40 −40 − − Vdc Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (NPN) (IC = −10 mAdc, IE = 0) (PNP) V(BR)CBO 60 −40 − − Vdc Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (NPN) (IE = −10 mAdc, IC = 0) (PNP) V(BR)EBO 6.0 −5.0 − − Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN) (VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP) IBL − − 50 −50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (NPN) (VCE = −30 Vdc, VEB = −3.0 Vdc) (PNP) ICEX − − 50 −50 nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (NPN) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = −0.1 mAdc, VCE = −1.0 Vdc) (PNP) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE 40 70 100 60 30 60 80 100 60 30 − − 300 − − − − 300 − − − Collector − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (NPN) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (PNP) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) − − − − 0.2 0.3 −0.25 −0.4 Vdc Base − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (NPN) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (PNP) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) 0.65 − −0.65 − 0.85 0.95 −0.85 −0.95 Vdc |
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