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C3D12065A Datasheet(PDF) 1 Page - Cree, Inc |
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C3D12065A Datasheet(HTML) 1 Page - Cree, Inc |
1 / 6 page 1 C3D12065A Rev. -, 12-2016 C3D12065A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 650VoltSchottkyRectifier • ZeroReverseRecoveryCurrent • ZeroForwardRecoveryVoltage • High-FrequencyOperation • Temperature-IndependentSwitchingBehavior • ExtremelyFastSwitching • PositiveTemperatureCoefficientonV F Benefits • ReplaceBipolarwithUnipolarRectifiers • EssentiallyNoSwitchingLosses • HigherEfficiency • ReductionofHeatSinkRequirements • ParallelDevicesWithoutThermalRunaway Applications • SwitchModePowerSupplies(SMPS) • BoostdiodesinPFCorDC/DCstages • FreeWheelingDiodesinInverterstages • AC/DCconverters Package TO-220-2 Maximum Ratings (TC=25°Cunlessotherwisespecified) Symbol Parameter Value Test Conditions Note V RRM RepetitivePeakReverseVoltage 650 V V RSM SurgePeakReverseVoltage 650 V V DC DCBlockingVoltage 650 V I F ContinuousForwardCurrent 35 16 12 A T C=25˚C T C=135˚C T C=150˚C Fig.3 I FRM RepetitivePeakForwardSurgeCurrent 51.5 33.5 A T C=25˚C,tP=10ms,HalfSinePulse T C-110˚C,tP=10ms,HalfSinePulse I FSM Non-RepetitivePeakForwardSurgeCurrent 104 82 A T C=25˚C,tP=10ms,HalfSinePulse T C=110˚C,tP=10ms,HalfSinePulse Fig.8 I F,Max Non-RepetitivePeakForwardCurrent 1075 900 A T C=25˚C,tP=10 ms,Pulse T C=110˚C,tP=10 ms,Pulse Fig.8 P tot PowerDissipation 143 62 W T C=25˚C T C=110˚C Fig.4 dV/dt DiodedV/dtruggedness 200 V/ns V R=0-650V ∫i2dt i2tvalue(PerLeg) 54 33.5 A2s T C=25˚C,tP=10ms T C=110˚C,tP=10ms T J,Tstg OperatingJunctionandStorageTemperature -55to+175 ˚C TO-220MountingTorque 1 8.8 Nm lbf-in M3Screw 6-32Screw Part Number Package Marking C3D12065A TO-220-2 C3D12065 PIN1 PIN2 CASE V RRM = 650 V I F (TC=135˚C) = 16 A Q c= 34nC |
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