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DTC115GUA Datasheet(PDF) 2 Page - Rohm

Part # DTC115GUA
Description  NPN 100mA 50V Digital Transistor
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

DTC115GUA Datasheet(HTML) 2 Page - Rohm

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DTC115GUA
　
　 　
　 　
　 　
　　
　 　
　 　 　 　 　 　 　 　
Datasheet
l
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Power dissipation
PD*1
200
mW
Junction temperature
Tj
150
℃
Range of storage temperature
Tstg
-55 to +150
℃
l
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Collector-base breakdown
voltage
BVCBO
IC = 50μA
50
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = 1mA
50
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = 72μA
5
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
500
nA
Emitter cut-off current
IEBO
VEB = 4V
30
-
58
μA
Collector-emitter saturation voltage
VCE(sat)
IC = 5mA, IB = 0.25mA
-
-
300
mV
DC current gain
hFE
VCE = 5V, IC=5mA
82
-
-
-
Emitter-base resistance
R
-
70
100
130
kΩ
Transition frequency
fT*2
VCE = 10V, IE = -5mA,
f = 100MHz
-
250
-
MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
　　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/4
20160403 - Rev.002


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