TIP48G datasheet(2/6 Pages) ONSEMI

Part #	TIP48G

Description	High Voltage NPN Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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TIP47G, TIP48G, TIP50G

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

TIP47

(IC = 30 mAdc, IB = 0)

TIP48

TIP50

VCEO(sus)

250

300

400

−

Vdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

TIP47

(VCE = 200 Vdc, IB = 0)

TIP48

(VCE = 300 Vdc, IB = 0)

TIP50

ICEO

−

1.0

mAdc

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0)

TIP47

(VCE = 400 Vdc, VBE = 0)

TIP48

(VCE = 500 Vdc, VBE = 0)

TIP50

ICES

−

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)

(IC = 1.0 Adc, VCE = 10 Vdc)

hFE

30

10

150

−

Collector−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.2 Adc)

VCE(sat)

−

1.0

Vdc

Base−Emitter On Voltage

(IC = 1.0 Adc, VCE = 10 Vdc)

VBE(on)

−

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz)

fT

10

−

MHz

Small−Signal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

25

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device

Package

Shipping

TIP47G

TO−220

(Pb−Free)

50 Units / Rail

TIP48G

TO−220

(Pb−Free)

50 Units / Rail

TIP49G

TO−220

(Pb−Free)

50 Units / Rail

TIP50G

TO−220

(Pb−Free)

50 Units / Rail

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