MJE5730 datasheet(3/6 Pages) ONSEMI

Part #	MJE5730

Description	High Voltage PNP Silicon Plastic Power Transistors

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MJE5730, MJE5731, MJE5731A

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3

IC, COLLECTOR CURRENT (AMPS)

1.0

0.8

1.4

1.2

0.4

0

0.6

0.2

Figure 3. Base−Emitter Voltage

0.05

0.2

2.0

0.1

0.5

0.3

1.0

0.02 0.03

VBE(sat) @ IC/IB = 5.0

TJ = - 55°C

25

°C

150

°C

1.0

0

TC, CASE TEMPERATURE (°C)

0

50

175

0.8

0.6

0.4

0.2

75

100

125

Figure 4. Normalized Power Derating

SECOND BREAKDOWN

DERATING

THERMAL

DERATING

25

150

10

5.0

Figure 5. Forward Bias Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

2.0

0.5

0.01

30

100

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

dc

500

ms

0.05

10

20

1.0ms

200 300

500

1.0

0.2

50

0.1

0.02

TC = 25°C

100

ms

MJE5730

MJE5731

MJE5732

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided

TJ(pk)

≤ 150_C. TJ(pk) may be calculated from the data in

Figure 6. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

t, TIME (ms)

1.0

0.01

1 k

0.3

0.2

0.07

RqJC(t) = r(t) RqJC

RqJC = 3.125°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.01

0.7

Figure 6. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

0.2

SINGLE PULSE

D = 0.5

0.05

0.1

0.02

0.01

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