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BUL45D2 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. BUL45D2
Description  High Speed, High Gain Bipolar NPN Power Transistor
Download  11 Pages
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BUL45D2 Datasheet(HTML) 2 Page - ON Semiconductor

 
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THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.65
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 5 Seconds
TL
260
_C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
400
450
Vdc
Collector−Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
700
910
Vdc
Emitter−Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
12
14.1
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
mAdc
Collector Cutoff Current
(VCE = Rated VCES, VEB = 0)
@ TC = 25°C
@ TC = 125°C
(VCE = 500 V, VEB = 0)
@ TC = 125°C
ICES
100
500
100
mAdc
Emitter−Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
100
mAdc
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C
@ TC = 125°C
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
VBE(sat)
0.8
0.7
0.89
0.79
1
0.9
1
0.9
Vdc
Collector−Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 80 mAdc)
@ TC = 25°C
@ TC = 125°C
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
(IC = 0.8 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
VCE(sat)
0.28
0.32
0.32
0.38
0.46
0.62
0.4
0.5
0.5
0.6
0.75
1
Vdc
DC Current Gain
(IC = 0.8 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
(IC = 2 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
22
20
10
7
34
29
14
9.5
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1 Adc)
@ TC = 25°C
@ TC = 125°C
(IEC = 2 Adc)
@ TC = 25°C
@ TC = 125°C
(IEC = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
VEC
1.04
0.7
1.2
0.85
0.62
1.5
1.6
1.2
V


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