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BUL45D2 Datasheet(PDF) 10 Page - ON Semiconductor

Part No. BUL45D2
Description  High Speed, High Gain Bipolar NPN Power Transistor
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BUL45D2 Datasheet(HTML) 10 Page - ON Semiconductor

 
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10
TYPICAL CHARACTERISTICS
Figure 30. Forward Bias Power Derating
1
0
160
100
20
TC, CASE TEMPERATURE (°C)
0.8
0.6
0.4
0.2
60
140
SECOND BREAKDOWN
DERATING
40
80
120
THERMAL DERATING
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC−VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 28 is
based on TC = 25
°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25
°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 28 may be found at any case temperature by using the
appropriate curve on Figure 30.
TJ(pk) may be calculated from the data in Figure 31. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 29). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
TYPICAL THERMAL RESPONSE
Figure 31. Typical Thermal Response (ZqJC(t)) for BUL45D2
1
0.01
10
0.1
0.01
t, TIME (ms)
0.1
1
100
1000
RqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05
SINGLE PULSE
0.5
0.2
0.1
0.02


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