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BUL45D2 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. BUL45D2
Description  High Speed, High Gain Bipolar NPN Power Transistor
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BUL45D2 Datasheet(HTML) 1 Page - ON Semiconductor

 
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© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 8
1
Publication Order Number:
BUL45D2/D
BUL45D2G
High Speed, High Gain
Bipolar NPN Power
Transistor
with Integrated Collector−Emitter Diode
and Built−in Efficient Antisaturation
Network
The BUL45D2G is state−of−art High Speed High gain BiPolar
transistor (H2BIP). High dynamic characteristics and lot−to−lot
minimum spread (
±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an hFE
window. It’s characteristics make it also suitable for PFC application.
Features
Low Base Drive Requirement
High Peak DC Current Gain
Extremely Low Storage Time Min/Max Guarantees Due to
the H2BIP Structure which Minimizes the Spread
Integrated Collector−Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
“6 Sigma” Process Providing Tight and Reproductible
Parameter Spreads
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
400
Vdc
Collector−Base Breakdown Voltage
VCBO
700
Vdc
Collector−Emitter Breakdown Voltage
VCES
700
Vdc
Emitter−Base Voltage
VEBO
12
Vdc
Collector Current − Continuous
IC
5
Adc
Collector Current − Peak (Note 1)
ICM
10
Adc
Base Current − Continuous
IB
2
Adc
Base Current − Peak (Note 1)
IBM
4
Adc
Total Device Dissipation
@ TC = 25_C
Derate above 25
°C
PD
75
0.6
W
W/
_C
Operating and Storage Temperature
TJ, Tstg
−65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
POWER TRANSISTOR
5.0 AMPERES,
700 VOLTS, 75 WATTS
TO−220
CASE 221A
STYLE 1
1
www.onsemi.com
MARKING DIAGRAM
2
3
BUL45D2G
AY WW
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
Device
Package
Shipping
ORDERING INFORMATION
BUL45D2G
TO−220
(Pb−Free)
50 Units / Rail
1
BASE
3
EMITTER
COLLECTOR
2, 4
4


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