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BUL45D2 Datasheet(PDF) 7 Page - ON Semiconductor

Part No. BUL45D2
Description  High Speed, High Gain Bipolar NPN Power Transistor
Download  11 Pages
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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BUL45D2 Datasheet(HTML) 7 Page - ON Semiconductor

 
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TYPICAL SWITCHING CHARACTERISTICS
1500
0
4
2
0
IC, COLLECTOR CURRENT (AMPS)
Figure 19. Inductive Switching,
tc @ IC/IB = 10
5
2
20
5
0
hFE, FORCED GAIN
15
4
3
1000
500
10
13
TJ = 125°C
TJ = 25°C
IC = 1 A
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
Figure 20. Inductive Storage Time
IC = 2 A
Figure 21. Inductive Fall Time
450
50
20
8
2
hFE, FORCED GAIN
Figure 22. Inductive Crossover Time
1400
400
0
hFE, FORCED GAIN
1000
600
200
350
250
150
4
6
10
12
TJ = 125°C
TJ = 25°C
IC = 1 A
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 mH
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
IC = 2 A
14
16
18
IC = 2 A
800
20
8
24
6
10
12
14
16
18
IC = 1 A
Figure 23. Inductive Storage Time, tsi
3000
0
3
1
0.5
IC, COLLECTOR CURRENT (AMPS)
2000
1000
1.5
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 mH
2
2.5
IB1 = IB2
IB = 50 mA
IB = 100 mA
IB = 200 mA
IB = 500 mA
Figure 24. Forward Recovery Time tfr
360
300
2
1
0.5
0
IF, FORWARD CURRENT (AMP)
dI/dt = 10 A/
ms
TC = 25°C
1.5
340
320
3.5
4
IB = 1 A
1200


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