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BC847ATT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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BC847ATT1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page BC847ATT1, BC847BTT1, BC847CTT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA) BC847 Series V(BR)CEO 45 − − V Collector − Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) BC847 Series V(BR)CES 50 − − V Collector − Base Breakdown Voltage (IC = 10 mA) BC847 Series V(BR)CBO 50 − − V Emitter − Base Breakdown Voltage (IE = 1.0 mA) BC847 Series V(BR)EBO 6.0 − − V Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO − − − − 15 5.0 nA mA ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) BC847A BC847B BC847C (IC = 2.0 mA, VCE = 5.0 V) BC847A BC847B BC847C hFE − − − 110 200 420 90 150 270 180 290 520 − − − 220 450 800 − Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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