DTB513ZE datasheet(2/10 Pages) ROHM

Part #	DTB513ZE

Description	-500mA/-12V Low VCE(sat)Digital transistor

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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DTB513Z series

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Supply voltage

VCC

-12

V

Input voltage

VIN

-10 to 5

V

Collector current

IC(MAX)*1

-500

mA

Power dissipation

DTB513ZM

PD*2

150

mW

DTB513ZE

150

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Input voltage

VI(off)

VCC = -5V, IO = -100μA

-

-0.3

V

VI(on)

VO = -0.3V, IO = -20mA

-2.5

-

Output voltage

VO(on)

IO = -100mA, II = -5mA

-

-60

-300

mV

Input current

II

VI = -5V

-

-6.4

mA

Output current

IO(off)

VCC = -12V, VI = 0V

-

-500

nA

DC current gain

GI

VO = -2V, IO = -100mA

140

-

Input resistance

R1

-

0.7

1

1.3

kΩ

Resistance ratio

R2/R1

-

8

10

12

-

Transition frequency

fT*1

VCE = -10V, IE = 5mA,

f = 100MHz

-

260

-

MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference land.

www.rohm.com

2/6

20151029 - Rev.002

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