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DTB513ZE Datasheet(PDF) 2 Page - Rohm |
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DTB513ZE Datasheet(HTML) 2 Page - Rohm |
2 / 10 page DTB513Z series Datasheet l lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Supply voltage VCC -12 V Input voltage VIN -10 to 5 V Collector current IC(MAX)*1 -500 mA Power dissipation DTB513ZM PD*2 150 mW DTB513ZE 150 Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ l lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Input voltage VI(off) VCC = -5V, IO = -100μA - - -0.3 V VI(on) VO = -0.3V, IO = -20mA -2.5 - - Output voltage VO(on) IO = -100mA, II = -5mA - -60 -300 mV Input current II VI = -5V - - -6.4 mA Output current IO(off) VCC = -12V, VI = 0V - - -500 nA DC current gain GI VO = -2V, IO = -100mA 140 - - - Input resistance R1 - 0.7 1 1.3 kΩ Resistance ratio R2/R1 - 8 10 12 - Transition frequency fT*1 VCE = -10V, IE = 5mA, f = 100MHz - 260 - MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/6 20151029 - Rev.002 |
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