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CD0603-S0180R Datasheet(PDF) 1 Page - Bourns Electronic Solutions |
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CD0603-S0180R Datasheet(HTML) 1 Page - Bourns Electronic Solutions |
1 / 6 page Features ■ RoHS compliant* ■ Leadless ■ High speed Switching Chip Diode Series - 0603/1005 *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/ EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in differ- ent applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0603 and 1005 size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are RoHS compliant with Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government regulations on lead-free components. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CDxxxx-S0180 CD1005-S01575 CDxxxx-S0180R Unit Forward Voltage (Max.) VF 1.00 (If = 100 mA) 1.00 (If = 50 mA) 1.00 (If = 100 mA) V Capacitance Between Terminals (Max.) CT 4 (f = 100 MHz, Vr = 1 V DC) pF Reverse Recovery Time (Max.) trr 4 (Vr = 6 V, If = 10 mA, RL = 50 ohms) nS Reverse Current (Max.) IR 0.1 (Vr = 80 V) 2.5 (Vr = 75 V) 0.05 (Vr = 75 V) µA Parameter Symbol CDxxxx-S0180 CD1005-S01575 CDxxxx-S0180R Unit Repetitive Peak Reverse Voltage VRRM 90 100 90 V Reverse Voltage VR 80 75 80 V Average Forward Current Io 100 150 100 mA Forward Current, Surge Peak Isurge 1** 4*** 1** A Power Dissipation CD0603 CD1005 PD 150 300 mW Storage Temperature TSTG -40 to +125 °C Junction Temperature TJ -40 to +125 °C How to Order CD 0603 - S 01 80 R Common Code Chip Diode Package • 0603 • 1005 Model S = High-Speed Switching Average Forward Current (Io) Code 01 = 100 mA 015 = 150 mA (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 80 = 80 V 75 = 75 V Reverse Current Suffix R = Low Leakage IR (CDxxxx-S0180R) ** Condition: 8.3 ms single half sine-wave superimposed on rate load (JEDEC method). *** Condition: 1.0 µs single half sine-wave superimposed on rate load (JEDEC method). This series is currently available but not recommended for new designs. |
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