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ISL70003SEHX Datasheet(PDF) 10 Page - Intersil Corporation |
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ISL70003SEHX Datasheet(HTML) 10 Page - Intersil Corporation |
10 / 32 page ISL70003SEH 10 FN8604.5 May 12, 2016 Submit Document Feedback POWER-ON RESET POR Pin Input Voltage 0.56 0.6 0.64 V POR Sink Current 9.6 12 14.4 µA ENABLE Enable VIH Voltage 2 V Enable VIL Voltage 0.8 V Enable (EN) Leakage EN = 4.5V 1.0 10 µA SELECT PHASE SEL 1, 2 VIH Voltage 2 V SEL 1, 2 VIL Voltage 0.8 V SEL 1, 2 Leakage Current SEL1, 2 = VREFD 1.0 10 µA PWM CONTROL LOGIC Switching Frequency FSEL = 1 255 300 345 kHz FSEL = 0 425 500 575 kHz Minimum On Time SS = GND (Note 14) 250 320 ns Minimum On Time (Note 14)160 220 ns Minimum Off Time (Note 14) 200 270 ns Modulator Gain (VIN /ΔVOSC)RT = 22kΩ, CT = 370pF, FSEL = 0 5 V/V RT = 36kΩ, CT = 370pF, FSEL = 1 4.8 V/V External Synchronization Frequency Range FSEL = 1, PVINx = 3.0V 255 300 345 kHz FSEL = 0, PVINx = 3.0V 425 500 575 kHz SYNC VIH Voltage 2 V SYNC VIL Voltage 0.8 V Synchronization Input Leakage Current SYNC = VREFD 1.0 4 µA SOFT-START Soft-start Source Current SS = GND 20 23 27 µA Soft-start Discharge ON-Resistance 3.0 6.0 Ω Soft-start Discharge Time (Note 14) 256 Clock Cycles REFERENCE VOLTAGE Reference Voltage Tolerance VREF + Error Amplifier VIO 0.594 0.6 0.606 V ERROR AMPLIFIER DC Gain (Note 14)80 dB Gain-bandwidth Product (Note 14)7 MHz Maximum Output Voltage VIN = 5.5V 3.5 4.2 V Slew Rate (Note 14)8.5 V/µs Feedback (FB) Input Leakage Current VFB = 0.6V, PVINx = 13.2V 250 nA Offset Voltage (VIO) -3 0 3 mV Electrical Specifications Unless otherwise noted, VIN = AVDD = DVDD = PVINx = EN = 3V - 13.2V; GND = AGND = DGND = PGNDx = GNDx = 0V; POR_VIN = FB = 0.65V; SYNC = LXx = Open Circuit; PGOOD is pulled up to VREFD with a 3k resistor; REF is bypassed to GND with a 220nF capacitor; SS is bypassed to GND with a 100nF capacitor; IOUT = 0A; TA = TJ = +25°C. (Note 4). Boldface limits apply across the operating temperature range, -55°C to +125°C; over a total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300rad(Si)/s; or over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued) PARAMETER TEST CONDITIONS MIN (Note 15)TYP MAX (Note 15)UNITS |
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