InGaAs Photodetector

PRELIMINARY

SD039-151-011

WWW.LUNAINC.COM

Precision – Control – Results

Information in this technical datasheet is believed to

be correct and reliable. However, no responsibility is

assumed for possible inaccuracies or omission.

Specifications are subject to change without notice.

Page 2/2

REV 01-04-16

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Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935

OPTO-ELECTRICAL PARAMETERS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Breakdown Voltage

20

-

40

V

Spectral Range

−

800

-

1700

nm

Responsivity

0.8

0.9

-

A/W

Shunt Resistance

40

200

-

M

Ω

Dark Current

-

0.2

10

nA

Capacitance

-

70

150

pF

Rise Time (50

Ω load)

-

2.0

-

ns

Noise Equivalent Power

-

1.0x10

-

fW/√Hz

TYPICAL PERFORMANCE

NOISE CURRENT vs. REVERSE BIAS

DARK CURRENT vs REVERSE BIAS

SPECTRAL RESPONSE

CAPACITANCE vs. REVERSE BIAS

<

1.E-15

1.E-14

1.E-13

1.E-12

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

ReverseVoltage (V)

1.E-12

1.E-11

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

ReverseVoltage [V]

0.05

0.15

0.25

0.35

0.45

0.55

0.65

0.75

0.85

0.95

680

880

1080

1280

1480

1680

Wavelenght, nm

5

25

45

65

85

105

125

145

165

0

5

10

15

20

ReverseBias [V]