© Semiconductor Components Industries, LLC, 2015

October, 2016 − Rev. 15

1

Publication Order Number:

MMBT2907ALT1/D

MMBT2907AL,

SMMBT2907AL

General Purpose Transistors

PNP Silicon

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

−60

Vdc

Collector − Base Voltage

−60

Vdc

Emitter − Base Voltage

−5.0

Vdc

Collector Current − Continuous

−600

mAdc

Collector Current − Peak (Note 3)

−1200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation − FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation − Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Total Device Dissipation − Heat Spreader

350

mW

Thermal Resistance, Junction−to−Ambient

357

°C/W

Junction and Storage Temperature

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

2F

= Device Code

M

= Date Code*

G

= Pb−Free Package

www.onsemi.com

COLLECTOR

3

1

BASE

2

EMITTER

Device

Package

ORDERING INFORMATION

MMBT2907ALT3G

SMMBT2907ALT3G

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT2907ALT1G

SMMBT2907ALT1G

SOT−23

(Pb−Free)

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

3000 / Tape &

Reel

10,000 / Tape &

Reel

SOT−23 (TO−236AB)

CASE 318

STYLE 6

MARKING DIAGRAM

1

2

1

3

2F M

G

G