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SMMBT2907AL Datasheet(PDF) 2 Page - ON Semiconductor |
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SMMBT2907AL Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MMBT2907AL, SMMBT2907AL www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 5) (IC = −1.0 mAdc, IB = 0) (IC = −10 mAdc, IB = 0) V(BR)CEO −60 −60 − − Vdc Collector − Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO −60 − Vdc Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX − −50 nAdc Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 125°C) ICBO − − −0.010 −10 mAdc Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IBL − −50 nAdc ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (IC = −500 mAdc, VCE = −10 Vdc) (Note 5) hFE 75 100 100 100 50 − − − 300 − − Collector − Emitter Saturation Voltage (Note 5) (IC = −150 mAdc, IB = −15 mAdc) (Note 5) (IC = −500 mAdc, IB = −50 mAdc) VCE(sat) − − −0.4 −1.6 Vdc Base − Emitter Saturation Voltage (Note 5) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) VBE(sat) − − −1.3 −2.6 Vdc SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (Notes 5, 6), (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) fT 200 − MHz Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 SWITCHING CHARACTERISTICS Turn−On Time (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) ton − 45 ns Delay Time td − 10 Rise Time tr − 40 Turn−Off Time (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) toff − 100 Storage Time ts − 80 Fall Time tf − 30 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 6. fT is defined as the frequency at which |hfe| extrapolates to unity. 0 0 -16 V 200 ns 50 1.0 k 200 -30 V TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns +15 V -6.0 V 1.0 k 37 50 1N916 1.0 k 200 ns -30 V TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit |
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