© Semiconductor Components Industries, LLC, 2015

August, 2016 − Rev. 11

1

Publication Order Number:

BC846BDW1T1/D

BC846BDW1, BC847BDW1,

BC848CDW1

Dual General Purpose

Transistors

NPN Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

Features

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable

Compliant*

MAXIMUM RATINGS

Rating

Symbol

BC846

BC847

BC848

Unit

Collector − Emitter Voltage

65

45

30

V

Collector − Base Voltage

80

50

30

V

Emitter − Base Voltage

6.0

6.0

5.0

V

Collector Current −

Continuous

100

100

100

mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

FR− 5 Board (Note 1)

Derate Above 25

°C

380

250

3.0

mW

mW

mW/

°C

Thermal Resistance,

Junction to Ambient

328

°C/W

Junction and Storage Temperature

Range

− 55 to +150

°C

1. FR−5 = 1.0 x 0.75 x 0.062 in

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SOT−363/SC−88

CASE 419B

STYLE 1

MARKING DIAGRAM

(1)

(2)

(3)

(4)

(5)

(6)

1x = Specific Device Code

x

= B, F, G, L

M = Date Code

G = Pb−Free Package

www.onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

(Note: Microdot may be in either location)

1x M

G

G

1

6