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Si8273GB-IS1 Datasheet(PDF) 10 Page - Silicon Laboratories

Part # Si8273GB-IS1
Description  Single PWM or dual digital inputs
Download  43 Pages
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Manufacturer  SILABS [Silicon Laboratories]
Direct Link  http://www.silabs.com
Logo SILABS - Silicon Laboratories

Si8273GB-IS1 Datasheet(HTML) 10 Page - Silicon Laboratories

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2.3 Power Supply Connections
Isolation requirements mandate individual supplies for VDDI, VDDA, and VDDB. The decoupling caps for these supplies must be
placed as close to the VDD and GND pins of the Si827x as possible. The optimum values for these capacitors depend on load current
and the distance between the chip and the regulator that powers it. Low effective series resistance (ESR) capacitors, such as Tantalum,
are recommended.
2.4 Power Dissipation Considerations
Proper system design must assure that the Si827x operates within safe thermal limits across the entire load range.The Si827x total
power dissipation is the sum of the power dissipated by bias supply current, internal parasitic switching losses, and power dissipated by
the series gate resistor and load. The equation below shows total Si827x power dissipation.
PD = (VDDI)(IDDI) + 2(IDD2)(VDD2) + ( f )(QG)
(V
DD2
) Rp
Rp + Rg
+
(f)(Q
G
)(V
DD2
) Rn
Rn + Rg
+ 2 fCintVDD22
where:
PD is the total Si827x device power dissipation (W)
IDDI is the input-side maximum bias current (10 mA)
IDD2 is the driver die maximum bias current (4 mA)
Cint is the internal parasitic capacitance (370 pF)
VDDI is the input-side VDD supply voltage (2.5 to 5.5 V)
VDD2 is the driver-side supply voltage (4.2 to 30 V)
f is the switching frequency (Hz)
QG is the gate charge of external FET
RG is the external gate resistor
RP is the RDS(ON) of the driver pull-up switch: 2.7 Ω
Rn is the RDS(ON) of the driver pull-down switch: 1 Ω
Equation 1
Power dissipation example for driver using Equation 1 with the following givens:
VDDI = 5.0 V
VDD2 = 12 V
f = 350 kHz
RG = 22 Ω
QG = 25 nC
Pd = 199 mW
From which the driver junction temperature is calculated using Equation 2, where:
Pd is the total Si827x device power dissipation (W)
θja is the thermal resistance from junction to air (105 °C/W in this example)
TA is the ambient temperature
T j = Pd × θ ja + TA = (0.199)(105) + 20 = 41.0 ° C
Si827x Data Sheet
System Overview
silabs.com | Smart. Connected. Energy-friendly.
Preliminary Rev. 0.5 | 9


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