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BT134WE Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BT134WE
Description  Triacs sensitive gate
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BT134WE Datasheet(HTML) 3 Page - NXP Semiconductors

   
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Philips Semiconductors
Product specification
Triacs
BT134W series E
sensitive gate
Fig.1. Maximum on-state dissipation, P
tot, versus rms
on-state current, I
T(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS) ,
versus solder point temperature T
sp.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
sp ≤ 108˚C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0
0.2
0.4
0.6
0.8
1
1.2
0
0.2
0.4
0.6
0.8
1
1.2
1.4
= 180
120
90
60
30
BT134W
IT(RMS) / A
Ptot / W
Tsp(max) / C
125
122
119
116
113
110
107
104
1
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
BT134W
Tsp / C
IT(RMS) / A
108 C
1
10
100
1000
BT134W
T / s
ITSM / A
10us
100us
1ms
10ms
100ms
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0.01
0.1
1
10
0
0.5
1
1.5
2
BT134W
surge duration / s
IT(RMS) / A
1
10
100
1000
0
2
4
6
8
10
12
BT134W
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
August 1997
3
Rev 1.200


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