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BT134WE Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BT134WE
Description  Triacs sensitive gate
Download  7 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BT134WE Datasheet(HTML) 2 Page - NXP Semiconductors

   
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Philips Semiconductors
Product specification
Triacs
BT134W series E
sensitive gate
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
full or half cycle
-
-
15
K/W
junction to solder point
R
th j-a
Thermal resistance
pcb mounted; minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted; pad area as in fig:14
-
70
-
K/W
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
T2+ G+
-
2.5
10
mA
T2+ G-
-
4.0
10
mA
T2- G-
-
5.0
10
mA
T2- G+
-
11
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
3.0
15
mA
T2+ G-
-
10
20
mA
T2- G-
-
2.5
15
mA
T2- G+
-
4.0
20
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
2.2
15
mA
V
T
On-state voltage
I
T = 2 A
-
1.2
1.5
V
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
V
D = 400 V; IT = 0.1 A; Tj = 125 ˚C
0.25
0.4
-
V
I
D
Off-state leakage current
V
D = VDRM(max); Tj = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 ˚C;
-
30
-
V/
µs
off-state voltage
exponential waveform; gate open circuit
t
gt
Gate controlled turn-on
I
TM = 1.5 A; VD = VDRM(max); IG = 0.1 A;
-
2
-
µs
time
dI
G/dt = 5 A/µs
August 1997
2
Rev 1.200


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