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BT134WE Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BT134WE
Description  Triacs sensitive gate
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BT134WE Datasheet(HTML) 1 Page - NXP Semiconductors

   
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Philips Semiconductors
Product specification
Triacs
BT134W series E
sensitive gate
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate triacs
SYMBOL
PARAMETER
MAX.
MAX. UNIT
in a plastic envelope suitable for
surface mounting, intended for use in
BT134W-
500E
600E
general
purpose
bidirectional
V
DRM
Repetitive peak off-state voltages
500
600
V
switching
and
phase
control
I
T(RMS)
RMS on-state current
1
1
A
applications, where high sensitivity is
I
TSM
Non-repetitive peak on-state current
10
10
A
required in all four quadrants.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
V
DRM
Repetitive peak off-state
-
500
1
600
1
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
sp ≤ 108 ˚C
-
1
A
I
TSM
Non-repetitive peak
full sine wave; T
j = 25 ˚C prior to
on-state current
surge
t = 20 ms
-
10
A
t = 16.7 ms
-
11
A
I
2tI2t for fusing
t = 10 ms
-
0.5
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 1.5 A; IG = 0.2 A;
on-state current after
dI
G/dt = 0.2 A/µs
triggering
T2+ G+
-
50
A/
µs
T2+ G-
-
50
A/
µs
T2- G-
-
50
A/
µs
T2- G+
-
10
A/
µs
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction
-
125
˚C
temperature
T1
T2
G
4
1
23
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
µs.
August 1997
1
Rev 1.200


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