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DG185 Datasheet(PDF) 7 Page - TEMIC Semiconductors |
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DG185 Datasheet(HTML) 7 Page - TEMIC Semiconductors |
7 / 8 page DG183/184/185 Siliconix S-52895—Rev. D, 16-Jun-97 7 Typical Characteristics (Cont’d) ID(off) vs. Temperature (DG184/185) Temperature ( _C) 100 10 1 0.1 25 45 65 85 105 125 B Suffix A Suffix Capacitance vs. VD or VS (DG183) VD or VS – Drain or Source Voltage (V) 30 26 22 18 14 10 –8 –4 0 4 8 CD(off) CS(off) CD(on) f = 1 MHz Off Isolation vs. Frequency Capacitance vs. VD or VS (DG184/185) VD or VS – Drain or Source Voltage (V) f – Frequency (Hz) 100 90 80 70 60 50 40 30 20 10 0 105 106 107 108 V+ = 15 V, V– = –15 V VR = 0, VL = 5 V RL = 75 W VIN w 220 mVRMS DG183 DG184/185 20 18 16 14 12 10 8 6 4 2 0 –10 –8 –6 –4 –2 0 2 4 6 8 10 CD(off) CS(off) CD(on) Capacitance is measured from test terminal to common. VINL = 0.8 V VINH = 2 V f = 1 MHz V+ = 10 V, V– = –20 V VD = –10 V, VS = 10 V |
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