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LM4866LQ Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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LM4866LQ Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 21 page Typical Performance Characteristics MTE Specific Characteristics LM4866MTE THD+N vs Output Power LM4866MTE THD+N vs Frequency 20018637 20018638 LM4866MTE THD+N vs Output Power LM4866MTE THD+N vs Frequency 20018639 20018640 LM4866MTE Power Dissipation vs Power Output LM4866MTE(Note 18) Power Derating Curve 20018641 20018642 Note 18: This curve shows the LM4866MTE’s thermal dissipation ability at different ambient temperatures given these conditions: 500LFPM + JEDEC board: The part is soldered to a 1S2P 20-lead exposed-DAP TSSOP test board with 500 linear feet per minute of forced-air flow across it. Board information - copper dimensions: 74x74mm, copper coverage: 100% (buried layer) and 12% (top/bottom layers), 16 vias under the exposed-DAP. 500LFPM + 2.5in2: The part is soldered to a 2.5in2, 1 oz. copper plane with 500 linear feet per minute of forced-air flow across it. 2.5in2: The part is soldered to a 2.5in2, 1oz. copper plane. Not Attached: The part is not soldered down and is not forced-air cooled. www.national.com 6 |
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