SMMBT3906LT1G datasheet(6/7 Pages) ONSEMI

Part #	SMMBT3906LT1G

Description	General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT3906L, SMMBT3906L

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Figure 15. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 16. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0

0.05

0.10

0.15

0.25

0.35

0.40

0.50

1

0.1

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Figure 17. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.30

IC/IB = 10

150

°C

25

°C

−55

°C

IC/IB = 10

150

°C

25

°C

−55

°C

VCE = 1 V

150

°C

25

°C

−55

°C

0.20

0.45

Figure 18. Current Gain Bandwidth vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

1000

100

10

1

0.1

10

100

1000

VCE = 2 V

TA = 25°C

VCE (Vdc)

100

10

1

0.1

0.01

0.001

0.01

0.1

1

Single Pulse Test

@ TA = 25°C

Thermal Limit

100 ms

1 s

10 ms

1 ms

IC, COLLECTOR CURRENT (mA)

-0.5

0

0.5

1.0

0

60

80

120

140

160

180

20

40

100

200

-1.0

-1.5

-2.0

+25

°C TO +125°C

-55

°C TO +25°C

+25

°C TO +125°C

-55

°C TO +25°C

qVC FOR VCE(sat)

qVB FOR VBE(sat)

Figure 19. Temperature Coefficients

Figure 20. Safe Operating Area

Similar Part No. - SMMBT3906LT1G

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	SMMBT3906LT1G	128Kb / 7P	General Purpose Transistor November, 2011 ??Rev. 10

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SMMBT3906LT1G Datasheet(PDF) 6 Page - ON Semiconductor

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