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IRF7493 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7493 Datasheet(HTML) 1 Page - International Rectifier |
1 / 9 page www.irf.com 1 7/29/03 SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A IRF7493 HEXFET® Power MOSFET Notes through
are on page 9 PD - 94654B l High frequency DC-DC converters Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max Qg (typ.) 80V 15m :@V GS=10V 35nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation f W PD @TC = 70°C Maximum Power Dissipation f Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Lead ––– 20 RθJA Junction-to-Ambient f ––– 50 Max. 9.3 7.4 74 ± 20 80 -55 to + 150 2.5 0.02 1.6 |
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