HY62KF08802B-DDI datasheet(4/10 Pages) HYNIX

Part #	HY62KF08802B-DDI

Description	1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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4 / 10 page

HY62KF08802B Series

Rev.00 / Jan.02

3

RECOMMENDED DC OPERATING CONDITION

Symbol

Parameter

Min.

Typ

Max.

Unit

Vcc

Supply Voltage

2.7

3.0 or 3.3

3.6

V

Vss

Ground

0

V

VIH

Input High Voltage

2.2

-

Vcc+0.3

V

VIL

Input Low Voltage

-0.3

1.

-

0.6

V

Note : 1. Undershoot : VIL = -1.5V for pulse width less than 30ns

2. Undershoot is sampled, not 100% tested.

DC ELECTRICAL CHARACTERISTICS

TA = -40

°C to 85°C

Sym

Parameter

Test Condition

Min

Typ

1.

Max

Unit

ILI

Input Leakage Current

Vss < VIN < Vcc

-1

-

1

uA

ILO

Output Leakage Current

Vss < VOUT < Vcc, /CS1 = VIH or

CS2 = VIL or /OE = VIH or /WE = VIL

-1

-

1

uA

Icc

Operating Power Supply Current

/CS1 = VIL, CS2 = VIH

VIN = VIH or VIL, II/O = 0mA

4

mA

55ns

25

mA

3.0~

3.6V

70ns

20

mA

55ns

20

mA

/CS1 = VIL, CS2 = VIH

VIN = VIH or VIL, Cycle

Time = Min,

100% Duty, II/O = 0mA

2.7~

3.3V

70ns

15

mA

ICC1

Average Operating Current

/CS1 < 0.2V, CS2 > Vcc-0.2V

VIN < 0.2V or VIN > Vcc-0.2V,

Cycle Time = 1us,

100% Duty, II/O = 0mA

3

mA

ISB

Standby Current (TTL Input)

/CS1 = VIH, CS2 = VIL

VIN = VIH or VIL

300

uA

SL

0.2

12

uA

3.0~

3.6V

LL

0.2

30

uA

SL

0.2

12

uA

ISB1

Standby Current (CMOS Input)

/CS1 > Vcc - 0.2V,

CS2 < Vss + 0.2V,

VIN > Vcc - 0.2V or

VIN < Vss + 0.2V

2.7~

3.3V

LL

0.2

25

uA

VOL

Output Low

IOL = 2.1mA

-

0.4

V

VOH

Output High

IOH = -1.0mA

2.4

-

V

Note

1. Typical values are at Vcc = 3.0V TA = 25

°C

2. Typical values are not 100% tested

CAPACITANCE

(Temp = 25

°C, f= 1.0MHz)

Symbol

Parameter

Condition

Max.

Unit

CIN

Input Capacitance (Add, /CS1,CS2, /WE, /OE)

VIN = 0V

8

pF

COUT

Output Capacitance (I/O)

VI/O = 0V

10

pF

Note : These parameters are sampled and not 100% tested

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