SBCW30LT1G datasheet(5/7 Pages) ONSEMI

Part #	SBCW30LT1G

Description	General Purpose Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BCW30LT1G, SBCW30LT1G

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5

TYPICAL DYNAMIC CHARACTERISTICS

Figure 11. Turn−On Time

IC, COLLECTOR CURRENT (mA)

500

Figure 12. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

2.0

5.0

10

20

30

50

1000

Figure 13. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 14. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 16. Output Admittance

IC, COLLECTOR CURRENT (mA)

3.0

1.0

500

0.5

10

5.0

7.0

10

20

30

50

70

100

300

7.0

70

100

VCC = 3.0 V

IC/IB = 10

TJ = 25°C

td @ VBE(off) = 0.5 V

tr

10

20

30

50

70

100

200

300

500

700

- 2.0

-1.0

VCC = - 3.0 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

tf

50

70

100

200

300

0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

0.05

Cib

Cob

2.0

5.0

10

20

50

1.0

0.2

100

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

0.1

0.2

0.5

VCE = -10 Vdc

f = 1.0 kHz

TA = 25°C

2.0

5.0

10

20

50

1.0

2.0

100

3.0

5.0

7.0

10

20

30

50

70

100

200

0.1

0.2

0.5

VCE = 10 Vdc

f = 1.0 kHz

TA = 25°C

200

- 3.0

- 5.0 - 7.0

- 20

-10

- 30

- 50 - 70 -100

TJ = 25°C

hfe ≈ 300

@ IC = -1.0 mA

hfe ≈ 300

@ IC = 1.0 mA

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