BCW72LT1G_16 datasheet(4/7 Pages) ONSEMI

Part #	BCW72LT1G

Description	General Purpose Transistor

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BCW72LT1G, SBCW72LT1G

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TYPICAL STATIC CHARACTERISTICS

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (mA)

400

0.004

TJ = 125°C

-55

°C

25

°C

VCE = 1.0 V

VCE = 10 V

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 10. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

10

20

50

1.6

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

*

qVC for VCE(sat)

qVB for VBE

0.1

0.2

0.5

Figure 11. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

0.002

TJ = 25°C

IC = 1.0 mA

10 mA

100 mA

Figure 12. Temperature Coefficients

50 mA

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

40

60

80

100

20

0

TA = 25°C

PULSE WIDTH = 300

ms

DUTY CYCLE

≤ 2.0%

IB = 500 mA

400

mA

300

mA

200

mA

100

mA

*APPLIES for IC/IB ≤ hFE/2

25

°C to 125°C

-55

°C to 25°C

25

°C to 125°C

-55

°C to 25°C

40

60

0.006 0.01

0.02 0.03

0.05 0.07 0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10

20

30

50

70 100

0.005 0.01 0.02 0.05 0.1 0.2

0.5

1.0 2.0

5.0 10

20

5.0

10

15

20

25

30

35

40

1.2

1.0

0.8

0.6

0.4

0.2

0

-2.4

0.8

0

-1.6

-0.8

1.0

2.0

5.0

10

20

50

100

0.1

0.2

0.5

200

100

80

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