© Semiconductor Components Industries, LLC, 1994

November, 2016 − Rev. 9

1

Publication Order Number:

BCX17LT1/D

BCX17LT1G, PNP

BCX18LT1G, PNP

BCX19LT1G, NPN

SBCX19LT1G, NPN

General Purpose

Transistors

Voltage and Current are Negative for

PNP Transistors

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

BCX17, BCX19

BCX18

45

25

Vdc

Collector − Base Voltage

BCX17, BCX19

BCX18

50

30

Vdc

Emitter − Base Voltage

5.0

Vdc

Collector Current − Continuous

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

− 55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in 99.5% alumina.

SOT−23

(TO−236)

CASE 318−08

STYLE 6

MARKING DIAGRAM

COLLECTOR

3

1

BASE

2

EMITTER

PNP

NPN

1

XX M

G

G

(Note: Microdot may be in either location)

XX

= T1, T2 or U1

M

= Date Code*

G

= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

COLLECTOR

3

1

BASE

2

EMITTER

www.onsemi.com