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NSS20200LT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NSS20200LT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NSS20200LT1G, NSV20200LT1G www.onsemi.com 2 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −20 Vdc Collector-Base Voltage VCBO −20 Vdc Emitter-Base Voltage VEBO −7.0 Vdc Collector Current − Continuous IC −2.0 A Collector Current − Peak ICM −4.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 460 3.7 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 270 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 540 4.3 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 230 °C/W Total Device Dissipation (Single Pulse < 10 sec.) PDsingle (Note 3) 710 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ 100 mm2, 1 oz. copper traces. 2. FR−4 @ 500 mm2, 1 oz. copper traces. 3. Thermal response. |
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