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AO8804 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part No. AO8804
Description  Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Download  6 Pages
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Maker  AOSMD [Alpha & Omega Semiconductors]
Homepage  http://www.aosmd.com
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AO8804 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

   
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AO8804
Symbol
Min
Typ
Max
Units
BVDSS
20
V
10
TJ=55°C
25
IGSS
10
µA
BVGSO
±12
V
VGS(th)
0.5
0.75
1
V
ID(ON)
30
A
10
13
TJ=125°C
13.3
16
11.5
14
m
15.4
19
m
22.2
27
m
gFS
36
S
VSD
0.73
1
V
IS
2.4
A
Ciss
1810
pF
Coss
232
pF
Crss
200
pF
Rg
1.6
Qg
17.9
nC
Qgs
1.5
nC
Qgd
4.7
nC
tD(on)
2.5
ns
tr
7.2
ns
tD(off)
49
ns
tf
10.8
ns
trr
20.2
ns
Qrr
8nC
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=4.5V, VDS=10V, ID=8A
Gate Source Charge
Gate Drain Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
RDS(ON)
IS=1A,VGS=0V
DYNAMIC PARAMETERS
VGS=0V, VDS=10V, f=1MHz
Zero Gate Voltage Drain Current
VGS=1.8V, ID=3A
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=8A
VDS=VGS ID=250µA
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VGS=2.5V, ID=4A
m
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
IDSS
µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8A
Gate-Body leakage current
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
Gate Threshold Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=10V, RL=1.2Ω,
RGEN=3Ω
Turn-On DelayTime
IF=8A, dI/dt=100A/µs
SWITCHING PARAMETERS
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.


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