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50RIA80 Datasheet(PDF) 3 Page - International Rectifier

Part No. 50RIA80
Description  MEDIUM POWER THYRISTORS
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

50RIA80 Datasheet(HTML) 3 Page - International Rectifier

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50RIA Series
3
Bulletin I2401 rev. A 07/00
www.irf.com
dv/dt
Max. critical rate of rise of
200
TJ = TJ max. linear to 100% rated VDRM
off-state voltage
500 (*)
TJ = TJ max. linear to 67% rated VDRM
V/µs
Parameter
50RIA
Units Conditions
Blocking
P
GM
Maximum peak gate power
10
T
J = TJ max, t
p ≤ 5ms
P
G(AV)
Maximum average gate power
2.5
I
GM
Max. peak positive gate current
2.5
A
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
250
T
J = - 40°C
to trigger
100
mA
T
J =
25°C
50
T
J = 125°C
V
GT
DC gate voltage required
3.5
T
J = - 40°C
to trigger
2.5
V
T
J =
25°C
10
W
V
20
Max. required gate trigger
current/voltage are the
lowest value which will trigger
all units 6V anode-to-cathode
applied
V
GD
DC gate voltage not to trigger
0.2
V
T
J = TJ max
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM anode-to-cathode applied
Parameter
50RIA
Units Conditions
T
J = TJ max
V
DRM = rated voltage
I
GD
DC gate current not to trigger
5.0
mA
Triggering
di/dt
Max. rate of rise of turned-on
T
C = 125°C, VDM = rated VDRM
current
VDRM ≤ 600V
200
A/µs
Gate pulse = 20V, 15
Ω, t
p = 6µs, tr = 0.1µs max.
VDRM ≤ 1600V
100
I
TM = (2x rated di/dt) A
td
Typical delay time
0.9
T
C = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit
Gate pulse = 10V, 15
Ω source, t
p = 20µs
tq
Typical turn-off time
110
T
C = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs
dir/dt = -10A/µs, V
R=50V
Parameter
50RIA
Units Conditions
Switching
µs
(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.


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