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DRV8886ATPWP Datasheet(PDF) 4 Page - Texas Instruments |
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DRV8886ATPWP Datasheet(HTML) 4 Page - Texas Instruments |
4 / 40 page 4 DRV8886AT SLVSDO1 – JANUARY 2017 www.ti.com Product Folder Links: DRV8886AT Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Power supply voltage (VM) –0.3 40 V Power supply voltage ramp rate (VM) 0 2 V/µs Charge pump voltage (VCP, CPH) –0.3 VM + 7 V Charge pump negative switching pin (CPL) –0.3 VM V Internal regulator voltage (DVDD) –0.3 3.8 V Internal regulator current output (DVDD) 0 1 mA Internal regulator voltage (AVDD) –0.3 5.7 V Control pin voltage (STEP, DIR, ENABLE, nFAULT, M0, M1, DECAY, TRQ, nSLEEP) –0.3 5.7 V Open drain output current (nFAULT) 0 10 mA Current limit input pin voltage (RREF) –0.3 6.0 V Continuous phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2) –1.0 VM + 1.0 V Transient 100 ns phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2) –3.0 VM + 3.0 V Peak drive current (AOUT1, AOUT2, BOUT1, BOUT2) 0 3 A Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 |
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