TMS28F210

65536 BY 16-BIT

FLASH MEMORY

SMJS210D – DECEMBER 1992 – REVISED AUGUST 1997

15

POST OFFICE BOX 1443

electrical characteristics over recommended ranges of supply voltage and operating free-air

temperature

PARAMETER

TEST CONDITIONS

MIN

MAX

UNIT

VOH

High level output voltage

TTL

IOH = – 2.5 mA

2.4

V

VOH

High-level output voltage

CMOS

IOH = – 100 µA

VCC – 0.4

V

VOL

Low level output voltage

TTL

IOL = 5.8 mA

0.45

V

VOL

Low-level output voltage

CMOS

IOL = 100 µA

0.1

V

II

Input current (leakage)

All except A9

VI = 0 V to 5.5 V

±1

µA

II

Input current (leakage)

A9

VI = 0 V to 13 V

± 200

µA

IO

Output current (leakage)

VO = 0 V to VCC

±10

µA

IID

A9 algorithm-selection-mode current

A9 = VID max

± 200

µA

IPP1

VPP supply current (read/standby)

VPP = VPPH,

Read mode

200

µA

IPP1

VPP supply current (read/standby)

VPP = VPPL

±10

µA

IPP2

VPP supply current (during program pulse)

(see Note 4)

VPP = VPPH

50

mA

IPP3

VPP supply current (during flash erase)

(see Note 4)

VPP = VPPH

50

mA

IPP4

VPP supply current (during program/erase verify)

(see Note 4)

VPP = VPPH

5

mA

ICCS

VCC supply current (standby)

TTL-input level

VCC = 5.5 V,

E = VIH

1

mA

ICCS

VCC supply current (standby)

CMOS-input level

VCC = 5.5 V,

E = VCC

100

µA

ICC1

VCC supply current (active read)

VCC = 5.5 V,

E = VIL,

IOUT = 0 mA,

f = 6 MHz

50

mA

ICC2

VCC average supply current (active write)

(see Note 4)

VCC = 5.5 V,

E = VIL,

Programming in progress

10

mA

ICC3

VCC average supply current (flash erase)

(see Note 4)

VCC = 5.5 V,

E = VIL,

Erasure in progress

15

mA

ICC4

VCC average supply current (program/erase verify)

(see Note 4)

VCC = 5.5 V,

E = VIL,

VPP = VPPH,

Program /erase verify in progress

15

mA

NOTE 4: Characterization data available

capacitance over recommended ranges of supply voltage and operating free-air temperature,

PARAMETER

TEST CONDITIONS

MIN

MAX

UNIT

Ci

Input capacitance

VI = 0 V,

f = 1 MHz

6

pF

Co

Output capacitance

VO = 0 V,

f = 1 MHz

12

pF

† Capacitance measurements are made on sample basis only.