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S-5843AA1AC-M5T1S Datasheet(PDF) 7 Page - Seiko Instruments Inc

Part # S-5843AA1AC-M5T1S
Description  TEMPERATURE SWITCH IC
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Manufacturer  SII [Seiko Instruments Inc]
Direct Link  http://www.sii.co.jp
Logo SII - Seiko Instruments Inc

S-5843AA1AC-M5T1S Datasheet(HTML) 7 Page - Seiko Instruments Inc

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TEMPERATURE SWITCH IC (THERMOSTAT IC)
Rev.2.2_01
S-5843A Series
7
DC Electrical Characteristics
1. CMOS output product
Table 7
(Ta =
+25°C, unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Power supply voltage
VDD
1.65
5.5
V
1
Detection temperature*1
+TD
TDET
− 2.5
TDET
TDET
+ 2.5
°C
1
Hysteresis temperature*2
THYS
2, 4, 10, 20
°C
1
Output current
IDETH
Output transistor Pch
VDET = 2.2 V, VDD = 3.0 V
2
9.4
mA
2
IDETL
Output transistor Nch
VDET = 0.4 V, VDD = 3.0 V
0.5
2.3
mA
2
Current consumption
during operation
IDD
VDD = 3.0 V
4.5
7.0
μA
1
*1. TDET: Set value of detection temperature
*2.
The hysteresis temperature is selectable in 2
°C, 4°C, 10°C, or 20°C.
However, if the detection temperature is
+40°C to +49°C, select hysteresis temperature in 2°C, 4°C or 10°C.
2. Nch open drain output product
Table 8
(Ta =
+25°C, unless otherwise specified)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Power supply voltage
VDD
1.65
5.5
V
1
Detection temperature*1
+TD
TDET
− 2.5
TDET
TDET
+ 2.5
°C
1
Hysteresis temperature*2
THYS
2, 4, 10, 20
°C
1
Output current
IDETL
Output transistor Nch
VDET = 0.4 V, VDD = 3.0 V
0.5
2.3
mA
2
Leakage current
ILEAK
Output transistor Nch
VDET = 5.5 V, VDD = 3.0 V
100
nA
2
Current consumption
during operation
IDD
VDD = 3.0 V
4.5
7.0
μA
1
*1. TDET: Set value of detection temperature
*2.
The hysteresis temperature is selectable in 2
°C, 4°C, 10°C, or 20°C.
However, if the detection temperature is
+40°C to +49°C, select hysteresis temperature in 2°C, 4°C or 10°C.
[Fahrenheit
⇔ Celsius Conversion equation]
°C = (°F − 32) × 5 / 9
°F = 32 + °C × 9 / 5
AC Electrical Characteristics
Table 9
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Test
circuit
Noise suppression time
tdelay
VDD = 3.0 V,
Ta = detection temperature
700
μs


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