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S4GBP20-C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part No. S4GBP20-C
Description  4.0 Amp Glass Passivited Elektronische Bauelemente Bridge Rectifiers
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

S4GBP20-C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  S4GBP20-C Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH S4GBP20-C Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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S4GBP20-C ~ S4GBP80-C
Voltage 200V ~ 800V
4.0 Amp Glass Passivited Bridge Rectifiers
Elektronische Bauelemente
29-Jun-2012 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
FEATURES
Ideal for printed circuit board
Low forward voltage drop, high current capability
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
These are Halogen & Pb Free components
This series is UL recognized under Component Index,
file number E255340
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Symbol
Part Number
Unit
S4GBP20-C
S4GBP40-C
S4GBP60-C
S4GBP80-C
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
800
V
Average Rectified Output
Current @60HZ sine
wave, R-load
TC=140°C
(with heat sink)
IO
4
A
TA=29°C
(without heat sink)
1.3
Peak Forward Surge Current @
60HZ sine wave, 1 cycle, TJ=25°C
IFSM
135
A
Maximum Peak Forward Voltage
3
VFM
1
V
Peak Reverse Current
2
IRRM
10
µA
I
2t Rating for Fusing @3ms≤t<8.3ms,
TJ=25°C,Rating of per diode
I
2t
75
A
2s
Mounting Torque @ Recommend torque:5kg·cm
TOR
8
Kg‧cm
Dielectric Strength
1
Vdis
2
kV
Typical Thermal Resistance (with heat sink)
RθJC
1.5
°C/W
Typical Thermal Resistance(without heat sink)
RθJA
55
°C/W
Typical Thermal Resistance(without heat sink)
RθJL
15
°C/W
Operating and Storage temperature range
TJ,TSTG
150, -55~150
°C
Notes:
1.
Terminals to case,AC 1 minute
2.
VRM=VRRM, Pulse measurement, Rating of per diode.
3.
IFM=2.0A, Pulse measurement, Rating of per diode
GBP
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
13.6
14.0
G
2.9
3.3
B
10.6
11
H
3.5
4.1
C
1
1.5
J
1.8
2.4
D
12.6
13.8
K
0.4
0.6
E
1.05
1.25
L
6.7
7.3
F
0.65
0.85
M
φ3.0
φ3.4


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