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S1GVB60-C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # S1GVB60-C
Description  Voltage 200V ~ 800V 1.0 Amp Glass Passivited Bridge Rectifiers
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

S1GVB60-C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  S1GVB60-C Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH S1GVB60-C Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
S1GVB20-C ~ S1GVB80-C
Voltage 200V ~ 800V
1.0 Amp Glass Passivited Bridge Rectifiers
27-Feb-2013 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
FEATURES
Ideal for printed circuit board
Low forward voltage drop, high current capability
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
These are Halogen & Pb Free components
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Symbol
S1GVB20-C
S1GVB40-C
S1GVB60-C
S1GVB80-C
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
800
V
Average Rectified Output Current @50HZ sine
wave, R-load, TA=25°C
IO
1
A
Peak Forward Surge Current @
50HZ sine wave, 1 cycle, TA=25°C
IFSM
50
A
Maximum Peak Forward Voltage
2
VFM
1.05
V
Peak Reverse Current
1
IRRM
10
µA
I
2t Rating for Fusing @1ms≤t<8.3ms, T
J=25°C
I
2t
10
A
2s
Typical Thermal Resistance
RθJA
62
°C/W
Typical Thermal Resistance
RθJL
16
°C/W
Operating and Storage temperature range
TJ,TSTG
150, -40~150
°C
Notes:
1.
VRM=VRRM, Pulse measurement, Rating of per diode.
2.
IFM=0.5A, Pulse measurement, Rating of per diode
GVB
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
15.3
15.9
F
0.70
0.80
B
7.00
7.40
G
3.90
4.10
C
9.00
9.60
H
0.40
0.60
D
10.0
-
I
0.70
1.10
E
1.20
1.40
J
3.20
3.60


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