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LM4755 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LM4755
Description  Stereo 11W Audio Power Amplifier with Mute
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4755 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
40V
Input Voltage
±0.7V
Output Current
Internally Limited
Power Dissipation (Note 3)
62.5W
ESD Susceptability (Note 4)
2 kV
Junction Temperature
150˚C
Soldering Information
T Package (10 seconds)
250˚C
Storage Temperature
−40˚C to 150˚C
Operating Ratings
Temperature Range
T
MIN ≤ TA ≤ TMAX
−40˚C
≤ T
A ≤ +85˚C
Supply Voltage
9V to 32V
θ
JC
2˚C/W
θ
JA
76˚C/W
Electrical Characteristics
The following specifications apply to each channel with V
CC = 24V, TA = 25˚C unless otherwise specified.
Symbol
Parameter
Conditions
LM4755
Units
(Limits)
Typical
(Note 5)
Limit
I
TOTAL
Total Quiescent Power
Supply Current
Mute Off
10
15
mA(max)
7
mA(min)
Mute On
7
mA
P
O
Output Power (Continuous
Average per Channel)
f = 1 kHz, THD+N = 10%,R
L =8Ω
7W
f = 1 kHz, THD+N = 10%,R
L =4Ω
11
10
W(min)
V
S = 20V, RL =8Ω
4W
V
S = 20V, RL =4Ω
7W
f = 1 kHz, THD+N = 10%,R
L =4Ω
V
S = 12V, TO-263 Pkg.
2.5
W
THD
Total Harmonic Distortion
f = 1 kHz, P
O = 1 W/ch, RL =8Ω
0.08
%
V
OSW
Output Swing
P
O = 10W, RL =8Ω
15
V
P
O = 10W, RL =4Ω
14
V
X
TALK
Channel Separation
See Apps. Circuit
55
dB
f = 1 kHz, V
O = 4 Vrms
PSRR
Power Supply Rejection Ratio
See Apps. Circuit
50
dB
f = 120 Hz, V
O = 1 mVrms
V
ODV
Differential DC Output Offset
Voltage
V
IN = 0V
0.09
0.4
V(max)
SR
Slew Rate
2
V/µs
R
IN
Input Impedance
83
k
PBW
Power Bandwidth
3 dB BW at P
O = 2.5W, RL =8Ω
65
kHz
A
VCL
Closed Loop Gain
(Internally Set)
R
L =8Ω
34
33
dB(min)
35
dB(max)
e
IN
Noise
IHF-A Weighting Filter, R
L =8Ω
Output Referred
0.2
mVrms
I
O
Output Short Circuit Limit
V
IN = 0.5V, RL =2Ω
2
A(min)
Mute Pin
V
IL
Mute Low Input Voltage
Not in Mute Mode
0.8
V(max)
V
IH
Mute High Input Voltage
In Mute Mode
2.0
2.5
V(min)
A
M
Mute Attenuation
V
MUTE = 5.0V
80
dB
Note 1: All voltages are measured with respect to the GND pin (5), unless otherwse specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Note 3: For operating at case temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and a thermal resistance of
θJC = 2˚C/W (junction to case). Refer to the section Determining the Maximum Power Dissipation in the Application Information section for more information.
Note 4: Human body model, 100 pF discharged through a 1.5 k
Ω resistor.
www.national.com
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