BDX54BG datasheet(2/7 Pages) ONSEMI

Part #	BDX54BG

Description	Plastic Medium-Power Complementary Silicon Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

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2

80

40

20

0

20

40

80

100

120

160

Figure 1. Power Derating

T, TEMPERATURE (

°C)

60

TA

TC

4.0

2.0

1.0

3.0

0

60

140

TA

TC

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 100 mAdc, IB = 0)

BDX53B, BDX54B

BDX53C, BDX54C

VCEO(sus)

80

100

−

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

BDX53B, BDX54B

(VCE = 50 Vdc, IB = 0)

BDX53C, BDX54C

ICEO

−

0.5

mAdc

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

BDX53B, BDX54B

(VCB = 100 Vdc, IE = 0)

BDX53C, BDX54C

ICBO

−

0.2

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 3.0 Adc, VCE = 3.0 Vdc)

hFE

750

−

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 12 mAdc)

VCE(sat)

−

2.0

4.0

Vdc

Base−Emitter Saturation Voltage

(IC = 3.0 Adc, IC = 12 mA)

VBE(sat)

−

2.5

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

hfe

4.0

−

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

BDX53B, 53C

BDX54B, 54C

Cob

−

300

200

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

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